Defect inspection methods are basic steps in electronic chip manufacturing and power device production processes in the semiconductor industry. As the industry pushes toward smaller nodes and more complex architectures, advanced inspection techniques like Polarized Stress Imaging (PSI) have become indispensable for detecting and quantifying stress-related defects in single-crystalline silicon wafers.

Based on stress induced photoelastic anisotropy, in-line polarized stress imaging (PSI) and quantitative determination of the local shear stress component are possible in single crystalline silicon wafers. Subsequently, such polarization stress images are compared and validated quantitatively with results of finite element simulations based on different 3D elastic models.

Uniquely, high resolution at high throughputs is achieved for 300 mm wafer size in the present quantitative stress imaging study.

What you will learn

By joining this webinar, you will gain valuable insights into the modeling workflow employed in COMSOL Multiphysics. Dr. Csanad Boros will demonstrate how structural contact problems can be simulated and provide guidance on validating results against experimental measurement data.

Agenda 

• Introduction to COMSOL Multiphysics
• Shear stress imaging
• Key takeaways
• Q&A

Who this webinar is for

This webinar is designed for engineers who would like to gain insights into simulation tasks used in semiconductor manufacturing. The webinar is also recommended for anyone interested in learning the basics of finite element modeling.